Metal oxide-graphene field-effect transistor: interface trap density extraction model

• Faraz Najam,
• Kah Cheong Lau,
• Cheng Siong Lim,
• Yun Seop Yu and
• Michael Loong Peng Tan

Beilstein J. Nanotechnol. 2016, 7, 1368–1376, doi:10.3762/bjnano.7.128

• interface trap states detrimentally affects the device drain current–gate voltage relationship Ids–Vgs. At the moment, there is no analytical method available to extract the interface trap distribution of metal-oxide-graphene field effect transistor (MOGFET) devices. The model presented here extracts the

• that can later be used in drain current model is highlighted as a major advantage of the model. Keywords: drain current compact model; interface trap distribution; metal-oxide-graphene field-effect transistor (MOGFET); surface potential; Introduction Graphene has recently attracted a lot of attention

• -graphene field-effect transistor (MOGFET) models do not take into account the detrimental effect of Dit states on device surface potential [4][5]. Zebrev et al. [6], recently presented a model that takes into account the effect of Dit states on the device current. A similar approach has been used by [7